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Investigation of defects created by growth of InAs quantum dots in GaAs

✍ Scribed by L. Dózsa; Zs. J. Horváth; P. Hubik; J. Kristofik; J. J. Mares; E. Gombia; P. Frigeri; R. Mosca; S. Franchi; B. Pécz; L. Dobos

Book ID
104556412
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
214 KB
Volume
0
Category
Article
ISSN
1862-6351

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## Abstract One of the difficulties in understanding energy transfer in bilayer quantum dot structures is the complex role of carrier tunneling. This limitation is due to the fact that, for most studies to date, QDs in each layer have only one confined energy level making it difficult to study reso