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Study of InAs/GaAs quantum dots grown by MOVPE under the safer growth conditions

โœ Scribed by Zongyou Yin; Xiaohong Tang; Wei Liu; Sentosa Deny; Jinghua Zhao; Daohua Zhang


Publisher
Springer Netherlands
Year
2006
Tongue
English
Weight
325 KB
Volume
9
Category
Article
ISSN
1388-0764

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Eight-band k.p theory including strain and piezoelectric effects are employed to calculate the strain distribution and electron and hole energy levels of InAs/GaAs quantum dots grown on [11k] substrates in the presence of an external magnetic field. Height of the dot determines how the increasing of

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We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si 1 ร€ x Ge x /Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si 1 ร€ x Ge x /Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized