Study of InAs/GaAs quantum dots grown by MOVPE under the safer growth conditions
โ Scribed by Zongyou Yin; Xiaohong Tang; Wei Liu; Sentosa Deny; Jinghua Zhao; Daohua Zhang
- Publisher
- Springer Netherlands
- Year
- 2006
- Tongue
- English
- Weight
- 325 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1388-0764
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๐ SIMILAR VOLUMES
Eight-band k.p theory including strain and piezoelectric effects are employed to calculate the strain distribution and electron and hole energy levels of InAs/GaAs quantum dots grown on [11k] substrates in the presence of an external magnetic field. Height of the dot determines how the increasing of
We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si 1 ร x Ge x /Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si 1 ร x Ge x /Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized