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The preferential formation site of dislocations in InAs/GaAs quantum dots

✍ Scribed by Shuai Zhou; Yumin Liu; Donglin Wang; Xia Xin; Gui Cao; Pengfei Lu; Zhongyuan Yu


Book ID
113915302
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
627 KB
Volume
51
Category
Article
ISSN
0749-6036

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We have studied the composition profiles of Stranski-Krastanov InAs/GaAs quantum dots grown on patterned nanohole arrays. Two dimensional surface chemical maps obtained by X-ray photoemission electron microscopy reveal a non-uniform composition profile similar to that of standard dots grown on plana