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Properties of Defect Traps in Triple-Stack InAs/GaAs Quantum Dots and Effect of Annealing

✍ Scribed by Chen, Jenn-Fang; Hsiao, Ru-Shang; Shih, Shen-Hung; Wang, Pai-Yong; Wang, Jyh-Shyang; Chi, Jim Y.


Book ID
123608423
Publisher
Institute of Pure and Applied Physics
Year
2004
Tongue
English
Weight
120 KB
Volume
43
Category
Article
ISSN
0021-4922

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The optical transitions of the wetting layers in two-fold self-assembled InAs=GaAs quantum dot samples are studied as a function of GaAs spacer thickness by various methods. The absorption related studies by photore ectance and selective photoluminescence excitation spectroscopy reveal already for t