Fluorine-Mediated Crystallization of Silicon in Plasma-Enhanced CVD

✍ Scribed by Cheolhyun Lim; Takafumi Yanagida; Junichi Hanna

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 196 KB
• Volume: 17
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.201004294

✦ Synopsis

Fluorine mediated crystal silicon thin films in plasma‐enhanced chemical vapor deposition were grown using a Si~2~H~6~ and SiF~4~ gas mixture without an intentional hydrogen dilution. The crystal growth took place at the temperatures above 400°C, and both crystallinity and growth rate were increased with an addition of SiF~4~. Optical emission spectroscopy reveals that addition of SiF~4~ changes the major precursor from SiH~3~ to SiH~n~F~m~ (n+m≤3), and provides an abundant atomic fluorine ambient. These results indicate that contribution of atomic hydrogen is not indispensable for the crystallization, and atomic fluorine can be an alternative to atomic hydrogen.