In Part I we reported the results of an emission spectroscopic study of the plasma obtained in an SiH 4 -N 2 -Ar mixture. It was shown that argon in metastable electronic excited states provides a high concentration of atomic nitrogen. In this part we report the results of a study of the influence o
ChemInform Abstract: Remote Plasma-Enhanced CVD of Fluorinated Silicon Nitride Films.
β Scribed by S. E. ALEXANDROV; M. L. HITCHMAN
- Publisher
- John Wiley and Sons
- Year
- 2010
- Weight
- 26 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0931-7597
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π SIMILAR VOLUMES
In a series of two papers we describe the effect of argon dilution of the nitrogen passed through the RF discharge region on the plasma composition, growth rate and some characteristics of silicon nitride films deposited by remove PECVD. In this part we report the results of an emission spectroscopi
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