Fluorine incorporation during Si solid phase epitaxy

✍ Scribed by G. Impellizzeri; S. Mirabella; L. Romano; E. Napolitani; A. Carnera; M.G. Grimaldi; F. Priolo

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 154 KB
• Volume: 242
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2005.08.146

✦ Synopsis

We have investigated the F incorporation and segregation in preamorphized Si during solid phase epitaxy (SPE) at different temperatures and for several implanted-F energies and fluences. The Si samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen temperature and then enriched with F at different energies (65-150 keV) and fluences (0.07-5 • 10 14 F/cm 2 ). Subsequently, the samples were regrown by SPE at different temperatures: 580, 700 and 800 °C. We have found that the amount of F incorporated after SPE strongly depends on the SPE temperature and on the energy and fluence of the implanted-F, opening the possibility to tailor the F profile during SPE.