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Incorporation of phosphorus during gas phase epitaxy

✍ Scribed by K.A. Jones; J.R. Flemish; H. Shen; V.S. Ban

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
422 KB
Volume
120
Category
Article
ISSN
0022-0248

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We have investigated the F incorporation and segregation in preamorphized Si during solid phase epitaxy (SPE) at different temperatures and for several implanted-F energies and fluences. The Si samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen temperature and then enri