Fluorine incorporation during Si solid p
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G. Impellizzeri; S. Mirabella; L. Romano; E. Napolitani; A. Carnera; M.G. Grimal
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Article
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2006
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Elsevier Science
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English
β 154 KB
We have investigated the F incorporation and segregation in preamorphized Si during solid phase epitaxy (SPE) at different temperatures and for several implanted-F energies and fluences. The Si samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen temperature and then enri