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Quasi in situ observation of Si lateral solid phase epitaxy

✍ Scribed by T. Ueno; K. Kawai; T. Morisawa; T. Hatano; S. Imai; S. Kaneko; I. Ohdomari


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
867 KB
Volume
56-58
Category
Article
ISSN
0169-4332

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## Abstract In situ X‐ray examination at a synchrotron beamline of the solution growth of self‐assembled SiGe structures on silicon (001) substrates through the backside has been realized by a specific heating equipment and a suitable growth assembly. The furnace allows heating of the growth assemb