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Film-thickness dependence of structural and electrical properties of boron-doped hydrogenated microcrystalline silicon prepared by radiofrequency magnetron sputtering

โœ Scribed by Akimori Tabata; Junya Nakano; Koji Mazaki; Kota Fukaya


Book ID
116672194
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
510 KB
Volume
356
Category
Article
ISSN
0022-3093

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This paper addresses the influences of film thickness on structural and electrical properties of dc magnetron sputter-deposited copper (Cu) films on p-type silicon. Cu films with thicknesses of 130-1050 nm were deposited from Cu target at sputtering power of 125 W in argon ambient gas pressure of 3.