✦ LIBER ✦

Features of electronic transport in relaxed Si/Si1−XGeX heterostructures with high doping level

✍ Scribed by Orlov, L.K.; nikova, A.A.Mel’; Orlov, M.L.; Alyabina, N.A.; Ivina, N.L.; Neverov, V.N.; Horváth, Zs.J.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Different strain relaxation mechanisms i

✍ ChangChun Chen; Ann-Chatrin Lindgren; ShiLi Zhang; DeZhang Zhu; A. Vantomme 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 173 KB

Strain relaxation and dopant distributio

✍ Y Miron; M Efrati Fastow; C Cytermann; R Brener; M Eizenberg; M Glück; H Kibbel; 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 201 KB

Thermally stimulated relaxation of misfi

✍ T. G. Yugova; M. G. Mil’vidskii; M. M. Rzaev; F. Schäffler 📂 Article 📅 2005 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 81 KB

High hole mobility in strained Ge channe

✍ Masanobu Miyao; Eiichi Murakami; Hiroyuki Etoh; Kiyokazu Nakagawa; Akio Nishida 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 306 KB

Fabrication of 0.12 μm pMOSFETs on high

✍ Doohwan Lee; Shinobu Takehiro; Masao Sakuraba; Junichi Murota; Toshiaki Tsuchiya 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 312 KB

Relaxation kinetics of impurity photocon

✍ Morozov, S. V.; Rumyantsev, V. V.; Kudryavtsev, K. E.; Gavrilenko, V. I.; Kozlov 📂 Article 📅 2013 🏛 Springer 🌐 English ⚖ 182 KB