Favourable photovoltaic effects in InGaN pin homojunction solar cell
β Scribed by Cai, X.-M.; Zeng, S.-W.; Zhang, B.-P.
- Book ID
- 120208647
- Publisher
- The Institution of Electrical Engineers
- Year
- 2009
- Tongue
- English
- Weight
- 253 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0013-5194
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## Abstract The effects of interface polarization charge on the photovoltaic characteristics of GaN/InGaN solar cells have been analyzed in detail using 2D driftβdiffusion simulations. The polarization charge at the GaN/InGaN interface creates an electric field that forces carriers generated by lig
## Abstract Different conductive films are used as pβGaN current spreading layers in order to explore photovoltaic action of InGaN/GaN double heterojunction solar cells. It is found that the devices with the 200βnm thick indiumβtin oxide (ITO) transparent spreading layers shows a very small decreas