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Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells

โœ Scribed by Lai, K. Y.; Lin, G. J.; Lai, Y.-L.; Chen, Y. F.; He, J. H.


Book ID
121254183
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
613 KB
Volume
96
Category
Article
ISSN
0003-6951

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Effects of Indium Segregation and Well-W
โœ A. Soltani Vala; M.J. Godfrey; P. Dawson ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 78 KB ๐Ÿ‘ 2 views

We report the results of calculations for the energies of confined electrons and holes and their wavefunction overlap in In x Ga 1--x N/GaN quantum wells (QWs) with an indium concentration of x = 15% in the well material. It is known that the observed increase in the photoluminescence lifetime with