Modeling of polarization effects in InGaN PIN solar cells
β Scribed by M. Lestrade; Z. Q. Li; Y. G. Xiao; Z. M. Simon Li
- Book ID
- 106489485
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 285 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0306-8919
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π SIMILAR VOLUMES
## Abstract The effects of interface polarization charge on the photovoltaic characteristics of GaN/InGaN solar cells have been analyzed in detail using 2D driftβdiffusion simulations. The polarization charge at the GaN/InGaN interface creates an electric field that forces carriers generated by lig
## Abstract Different conductive films are used as pβGaN current spreading layers in order to explore photovoltaic action of InGaN/GaN double heterojunction solar cells. It is found that the devices with the 200βnm thick indiumβtin oxide (ITO) transparent spreading layers shows a very small decreas