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Effects of polarization charge on the photovoltaic properties of InGaN solar cells

✍ Scribed by Li, Z. Q. ;Lestradet, M. ;Xiao, Y. G. ;Li, S.

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
337 KB
Volume
208
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The effects of interface polarization charge on the photovoltaic characteristics of GaN/InGaN solar cells have been analyzed in detail using 2D drift‐diffusion simulations. The polarization charge at the GaN/InGaN interface creates an electric field that forces carriers generated by light to drift in opposite direction needed for efficient collection and substantially reduces the short circuit current (I~sc~) and open circuit voltage (V~oc~). The polarization charge plays an important role in the photovoltaic properties of InGaN solar cells comparable to that of defects. For small interface charge, the potential barrier could increase the V~oc~.

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