Effect of contact spreading layer on photovoltaic response of InGaN-based solar cells

✍ Scribed by Zheng, Xinhe ;Tang, Longjuan ;Zhang, Dongyan ;Dong, Jianrong ;Yang, Hui

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 196 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201026289

✦ Synopsis

Abstract

Different conductive films are used as p‐GaN current spreading layers in order to explore photovoltaic action of InGaN/GaN double heterojunction solar cells. It is found that the devices with the 200‐nm thick indium‐tin oxide (ITO) transparent spreading layers shows a very small decrease in fill factor compared to those with the 3‐nm Ni/3‐nm Au semitransparent metal, but the former demonstrates an enhancement of short‐circuit current density by 24% due to the increased amount of light that reaches the solar cell. This improvement in usable light is shown by the increase in transmission and external quantum efficiency.