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[IEEE 2010 10th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Atlanta, GA, USA (2010.09.6-2010.09.9)] Numerical Simulation of Optoelectronic Devices - Modeling of polarization effects in InGaN PIN solar cells

✍ Scribed by Lestrade, M.; Li, Z.Q.; Xiao, Y.G.; Li, Z.M. Simon

Book ID: 118017434
Publisher: IEEE
Year: 2010
Weight: 565 KB
Volume: 0
Category: Article
ISBN: 1424470161
DOI: 10.1109/nusod.2010.5595657

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