✦ LIBER ✦

Fast neutron irradiation-effects on GaAs1-xPxP−N diode laser threshold currents

✍ Scribed by J. H. Doede; R. H. Vonderohe; N. Holonyak; C. J. Nuese; C. M. Wolfes

Publisher: Springer
Year: 1965
Tongue: English
Weight: 140 KB
Volume: 16
Category: Article
ISSN: 0044-2275
DOI: 10.1007/bf01589065

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Absorption edge effects on the temperatu

Absorption edge effects on the temperature dependence of threshold currents in GaAS laser diodes

✍ N.N. Winigradoff; M.A. Sacilotti 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 275 KB

Annealing effects on leakage current and

Annealing effects on leakage current and epilayer doping concentration of p+n junction 4H-SiC diodes after very high neutron irradiation

✍ Francesco Moscatelli; A. Scorzoni; A. Poggi; R. Nipoti 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 153 KB

Effect of Neutron Irradiation and Anneal

Effect of Neutron Irradiation and Annealing on the Intensity of the Copper Related 1.01 eV Emission Band in n-type GaAs

✍ Prof. Dr. K. D. Glinchuk; Prof. Dr. A. V. Prokhorovich 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 249 KB

The effect of In/N ratio on the optical

The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1 − xAs1 − yNy/GaAs laser structures

✍ R. Potter; S. Mazzucato; N. Balkan; M.J. Adams; P.R. Chalker; T.B. Joyce; T.J. B 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 416 KB

We present a review of published work concerning the effect of In and N compositions on the operation wavelength, optical quality and lasing threshold in Ga x In 1-x As 1-y N y /GaAs QW and double heterostructure lasers. We show that the emission wavelength in the range between 1.0 and 1.4 µm can be