Annealing effects on leakage current and epilayer doping concentration of p+n junction 4H-SiC diodes after very high neutron irradiation

✍ Scribed by Francesco Moscatelli; A. Scorzoni; A. Poggi; R. Nipoti

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 153 KB
• Volume: 583
• Category: Article
• ISSN: 0168-9002
• DOI: 10.1016/j.nima.2007.08.211