Absorption edge effects on the temperature dependence of threshold currents in GaAS laser diodes
β Scribed by N.N. Winigradoff; M.A. Sacilotti
- Publisher
- Elsevier Science
- Year
- 1977
- Tongue
- English
- Weight
- 275 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
We have measured the change in threshold current and lasing photon energy as a function of pressure in 1.3 mm semiconductor quantum well lasers. We observe a decrease in threshold current with increasing pressure indicative of an Auger recombination process which decreases as the band gap increases.
Spectrally resolved measurements of water vapor absorption spectra near \(1.4 \mu \mathrm{m}\) have been performed with a tunable, distributed-feedback InGaAsP diode laser. A lineshape analysis was used to infer the collision-broadening coefficient of 11 rovibrational transitions in the \(\nu_{1}+\n