Influence of inhomogeneous distribution of the minority carriers on the doping dependence of the threshold current in EBP lasers using n-type GaAs at 300°K

✍ Scribed by S. Rakshit; S.N. Biswas; A.N. Chakravarti

• Publisher: Elsevier Science
• Year: 1971
• Tongue: English
• Weight: 321 KB
• Volume: 4
• Category: Article
• ISSN: 0030-4018
• DOI: 10.1016/0030-4018(71)90074-5