Doping dependence of the internal quantum efficiency as a function of the beam voltage in electron-beam-excited n-type GaAs at 300°K

✍ Scribed by S.N. Biswas; S. Rakshit; A.N. Chakravarti

• Publisher: Elsevier Science
• Year: 1971
• Tongue: English
• Weight: 244 KB
• Volume: 3
• Category: Article
• ISSN: 0030-4018
• DOI: 10.1016/0030-4018(71)90099-x