Effect of Fast Electron Irradiation and
โ
Dr. K. D. Glinchuk; V. I. Guroshev; A. V. Prokhorovich; N. S. Zayats
๐
Article
๐
1986
๐
John Wiley and Sons
๐
English
โ 427 KB
Irradiation-induced 1.26 and 1.39 eV Emiwion Bands1) The effect of 2.2 MeV electron irradiation and subsequent annealings on the photoluminescence in zinc-doped p-type GaAs crystals is studied and analyzed. Rather strong emission bands peaked a t hv, (77 K ) near 1.26 eV (induced by electron irradi