Effect of Fast Electron Irradiation and Annealing on the Luminescence in GaAs(Zn) crystals. Irradiation-induced 1.26 and 1.39 eV Emission Bands

✍ Scribed by Dr. K. D. Glinchuk; V. I. Guroshev; A. V. Prokhorovich; N. S. Zayats

• Publisher: John Wiley and Sons
• Year: 1986
• Tongue: English
• Weight: 427 KB
• Volume: 21
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.2170210624

✦ Synopsis

Irradiation-induced 1.26 and 1.39 eV Emiwion Bands1)

The effect of 2.2 MeV electron irradiation and subsequent annealings on the photoluminescence in zinc-doped p-type GaAs crystals is studied and analyzed. Rather strong emission bands peaked a t hv, (77 K ) near 1.26 eV (induced by electron irradiation) and 1.39 eV (induced by annealing of irradiated crystals) are observed. Evidence is presented that the 1.26 and 1.39 eV emission bands occur due to radiative electronic transitions in AsiZnGa and VAsZnGa pairs induced by irradiation and annealing of irradiated crystals, accordingly. The observed variations in the intensities of the 1.26 and 1.39 eV emission bands upon irradiation and subsequent annealings of GaAs(Zn) crystals are explained in terms of irradiation and annealing-induced variations in the amount of 1.26 and 1.39 eV radiative centres resulting from : a) the effective interaction of mobile radiation-induced defects in the arsenic sublattice with zinc atoms leading to the formation of AsiZnGa and VAsZnGa pairs; b) the thermal dissociation of AsiZnGa and VAsZnGa pairs on individual components.