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Far-infrared spectroscopy in strained AlSb/InAs/AlSb quantum wells

✍ Scribed by Yang, M J; Lin-Chung, P J; Wagner, R J; Waterman, J R; Moore, W J; Shanabrook, B V

Book ID
120189284
Publisher
Institute of Physics
Year
1993
Tongue
English
Weight
290 KB
Volume
8
Category
Article
ISSN
0268-1242

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A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum