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Fabrication of silicon nanodots on insulator using block copolymer thin film

✍ Scribed by G.B. Kang; Y.T. Kim; J.H. Park; S.-I. Kim; Y.-S. Sohn

Book ID: 108079194
Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 507 KB
Volume: 9
Category: Article
ISSN: 1567-1739
DOI: 10.1016/j.cap.2008.12.060

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A topographic image of the PS-PFMA film after the scCO 2 process using 25 MPa saturated pressure. The original film thickness was 81 nm before the scCO 2 process. The full-scale height is 16 nm. The bar indicates 200 nm.