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Fabrication of metal nano dot dry etching mask using block copolymer thin film

โœ Scribed by G.B. Kang; S.-I. Kim; Y.T. Kim; J.H. Park


Book ID
108079157
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
354 KB
Volume
9
Category
Article
ISSN
1567-1739

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## Abstract Metalโ€assisted etching is used in conjunction with blockโ€copolymer lithography to create ordered and denselyโ€packed arrays of highโ€aspectโ€ratio singleโ€crystal silicon nanowires with uniform crystallographic orientations. Nanowires with diameters and spacings down to 19โ€‰nm and 10โ€‰nm, res