Fabrication of metal nano dot dry etching mask using block copolymer thin film
โ Scribed by G.B. Kang; S.-I. Kim; Y.T. Kim; J.H. Park
- Book ID
- 108079157
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 354 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1567-1739
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A topographic image of the PS-PFMA film after the scCO 2 process using 25 MPa saturated pressure. The original film thickness was 81 nm before the scCO 2 process. The full-scale height is 16 nm. The bar indicates 200 nm.
## Abstract Metalโassisted etching is used in conjunction with blockโcopolymer lithography to create ordered and denselyโpacked arrays of highโaspectโratio singleโcrystal silicon nanowires with uniform crystallographic orientations. Nanowires with diameters and spacings down to 19โnm and 10โnm, res