𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Fabrication of freestanding GaN microstructures using AlN sacrificial layers

✍ Scribed by E. Zaus; M. Hermann; M. Stutzmann; M. Eickhoff


Book ID
112182550
Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
151 KB
Volume
1
Category
Article
ISSN
1862-6254

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Fabrication of suspended GaN microstruct
✍ Yang, Z. ;Wang, R. N. ;Jia, S. ;Wang, D. ;Zhang, B. S. ;Lau, K. M. ;Chen, K. J. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 290 KB

## Abstract We demonstrate a technique for fabricating suspended gallium nitride (GaN) microstructures without direct etching of GaN. The process combines a selective area growth of GaN‐on‐patterned‐silicon substrate (GPS) and a subsequent sacrificial wet etching of the silicon under the GaN struct

Microstructure of N-face InN grown on Si
✍ Dimitrakopulos, G. P. ;Kehagias, Th. ;Ajagunna, A. ;Kioseoglou, J. ;Kerasiotis, πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 650 KB

## Abstract The structural properties of 2 ¡m thick N‐face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited th