Fabrication of freestanding GaN microstructures using AlN sacrificial layers
β Scribed by E. Zaus; M. Hermann; M. Stutzmann; M. Eickhoff
- Book ID
- 112182550
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 151 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1862-6254
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## Abstract We demonstrate a technique for fabricating suspended gallium nitride (GaN) microstructures without direct etching of GaN. The process combines a selective area growth of GaNβonβpatternedβsilicon substrate (GPS) and a subsequent sacrificial wet etching of the silicon under the GaN struct
## Abstract The structural properties of 2βΒ΅m thick Nβface InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20βnm AlN and 40βnm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited th