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Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique

✍ Scribed by Yang, Z. ;Wang, R. N. ;Jia, S. ;Wang, D. ;Zhang, B. S. ;Lau, K. M. ;Chen, K. J.

Book ID: 105363599
Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 290 KB
Volume: 203
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200565102

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✦ Synopsis

Abstract

We demonstrate a technique for fabricating suspended gallium nitride (GaN) microstructures without direct etching of GaN. The process combines a selective area growth of GaN‐on‐patterned‐silicon substrate (GPS) and a subsequent sacrificial wet etching of the silicon under the GaN structures. Both anisotropic and isotropic wet etching techniques are used to carry out the sacrificial etching. The pattern‐dependent lateral growth property of GaN growth is also discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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