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Fabrication of diamond p–i–p–i–p structures and their electrical and electroluminescence properties under high electric fields

✍ Scribed by Watanabe, T.; Teraji, T.; Ito, T.

Book ID
122885490
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
417 KB
Volume
16
Category
Article
ISSN
0925-9635

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## Abstract We have investigated the electrical and light‐emitting characteristics of (001)‐oriented homoepitaxial diamond p–i–n junction diodes with the boron‐doped p‐type, non‐doped intrinsic, and phosphorus‐doped n‐type layers formed by applying an optimized homoepitaxial growth technique based