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Electrical and light-emitting properties of (001)-oriented homoepitaxial diamond p–i–n junction

✍ Scribed by Makino, Toshiharu; Tokuda, Norio; Kato, Hiromitsu; Ogura, Masahiko; Watanabe, Hideyuki; Ri, Sung-Gi; Yamasaki, Satoshi; Okushi, Hideyo


Book ID
123293147
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
274 KB
Volume
16
Category
Article
ISSN
0925-9635

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Electrical and light-emitting properties
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## Abstract We have investigated the electrical and light‐emitting characteristics of (001)‐oriented homoepitaxial diamond p–i–n junction diodes with the boron‐doped p‐type, non‐doped intrinsic, and phosphorus‐doped n‐type layers formed by applying an optimized homoepitaxial growth technique based

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