Electrical and light-emitting properties of (001)-oriented homoepitaxial diamond p–i–n junction
✍ Scribed by Makino, Toshiharu; Tokuda, Norio; Kato, Hiromitsu; Ogura, Masahiko; Watanabe, Hideyuki; Ri, Sung-Gi; Yamasaki, Satoshi; Okushi, Hideyo
- Book ID
- 123293147
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 274 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0925-9635
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## Abstract We have investigated the electrical and light‐emitting characteristics of (001)‐oriented homoepitaxial diamond p–i–n junction diodes with the boron‐doped p‐type, non‐doped intrinsic, and phosphorus‐doped n‐type layers formed by applying an optimized homoepitaxial growth technique based
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