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Electrical and light-emitting properties from (111)-oriented homoepitaxial diamond p–i–n junctions

✍ Scribed by Makino, Toshiharu; Ri, Sung-Gi; Tokuda, Norio; Kato, Hiromitsu; Yamasaki, Satoshi; Okushi, Hideyo

Book ID
122899126
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
587 KB
Volume
18
Category
Article
ISSN
0925-9635

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Electrical and light-emitting properties
Electrical and light-emitting properties of homoepitaxial diamond p-i-n junction
✍ Makino, Toshiharu ;Tokuda, Norio ;Kato, Hiromitsu ;Kanno, Shokichi ;Yamasaki, Sa 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 492 KB

## Abstract We have investigated the electrical and light‐emitting characteristics of (001)‐oriented homoepitaxial diamond p–i–n junction diodes with the boron‐doped p‐type, non‐doped intrinsic, and phosphorus‐doped n‐type layers formed by applying an optimized homoepitaxial growth technique based