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Electrical and optical properties of light-emitting p–i–n diodes on diamond

✍ Scribed by Melnikov, A. A.; Denisenko, A. V.; Zaitsev, A. M.; Shulenkov, A.; Varichenko, V. S.; Filipp, A. R.; Dravin, V. A.; Kanda, H.; Fahrner, W. R.

Book ID
121257603
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
455 KB
Volume
84
Category
Article
ISSN
0021-8979

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Electrical and light-emitting properties
Electrical and light-emitting properties of homoepitaxial diamond p-i-n junction
✍ Makino, Toshiharu ;Tokuda, Norio ;Kato, Hiromitsu ;Kanno, Shokichi ;Yamasaki, Sa 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 492 KB

## Abstract We have investigated the electrical and light‐emitting characteristics of (001)‐oriented homoepitaxial diamond p–i–n junction diodes with the boron‐doped p‐type, non‐doped intrinsic, and phosphorus‐doped n‐type layers formed by applying an optimized homoepitaxial growth technique based