Electrical properties of diamond p–i–p structures at high electric fields
✍ Scribed by M. Yamamoto; T. Watanabe; M. Hamada; T. Teraji; T. Ito
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 223 KB
- Volume
- 244
- Category
- Article
- ISSN
- 0169-4332
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## Abstract We have investigated the electrical and light‐emitting characteristics of (001)‐oriented homoepitaxial diamond p–i–n junction diodes with the boron‐doped p‐type, non‐doped intrinsic, and phosphorus‐doped n‐type layers formed by applying an optimized homoepitaxial growth technique based
Time-resolved photoluminescence (PL), steady-state PL, and electroluminescence (EL) techniques have been used to characterize the carrier relaxation processes and carrier escape mechanisms in self-assembled InAs/GaAs quantum dot (SAQD) p-i-n structures under reverse bias. The measurements were perfo