✦ LIBER ✦

Fabrication of CNTs/Cu composite thin films for interconnects application

✍ Scribed by Ping Liu; Dong Xu; Zijiong Li; Bo Zhao; Eric Siu-Wai Kong; Yafei Zhang

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 767 KB
Volume: 85
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2008.04.046

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electroplating of Cu(Ag) thin films for

Electroplating of Cu(Ag) thin films for interconnect applications

✍ S. Strehle; S. Menzel; J.W. Bartha; K. Wetzig 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 525 KB

Barrier and seed repair performance of t

Barrier and seed repair performance of thin RuTa films for Cu interconnects

✍ H. Volders; L. Carbonell; N. Heylen; K. Kellens; C. Zhao; K. Marrant; G. Faelens 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 802 KB

Fabrication of suspended thin film reson

Fabrication of suspended thin film resonator for application of RF bandpass filter

✍ Hyun Ho Kim; Byeong Kwon Ju; Yun Hi Lee; Si Hyung Lee; Jeon Kook Lee; Soo Won Ki 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 536 KB

Fabrication of hydroxyapatite thin films

Fabrication of hydroxyapatite thin films for biomedical applications using RF magnetron sputtering

✍ Tetsuro Yamaguchi; Yoshikazu Tanaka; Ari Ide-Ektessabi 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 99 KB

Fabrication and characterization of indi

Fabrication and characterization of indium tin oxide thin films for electroluminescent applications

✍ R. Tueta; M. Braguier 📂 Article 📅 1981 🏛 Elsevier Science 🌐 English ⚖ 369 KB

Fabrication and properties of silicon-ba

Fabrication and properties of silicon-based PZT thin films for MFSFET applications

✍ Tian-Ling Ren; Tian-Qi Shao; Wu-Quan Zhang; Chun-Xiao Li; Jian-She Liu; Li-Tian 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 393 KB

Fabrication and properties of lead zirconate titanate (PZT) thin films have been studied for metalferroelectric-semiconductor FET (MFSFET) devices. PZT-based MFS capacitors using lead titanate (PT) as seeding layers have been prepared, respectively, on p-type k111l and n-type k100l silicon wafers di