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Fabrication and properties of silicon-based PZT thin films for MFSFET applications

✍ Scribed by Tian-Ling Ren; Tian-Qi Shao; Wu-Quan Zhang; Chun-Xiao Li; Jian-She Liu; Li-Tian Liu; Jun Zhu; Zhi-Jian Li

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
393 KB
Volume
66
Category
Article
ISSN
0167-9317

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✦ Synopsis

Fabrication and properties of lead zirconate titanate (PZT) thin films have been studied for metalferroelectric-semiconductor FET (MFSFET) devices. PZT-based MFS capacitors using lead titanate (PT) as seeding layers have been prepared, respectively, on p-type k111l and n-type k100l silicon wafers directly by a sol-gel method. PZT / PT films are finally annealed at 650 8C for 1 min in oxygen ambient using rapid thermal annealing (RTA). The measured memory windows of the MFS capacitors are about 1.8 and 5 V under the polarization voltages of 65 and 610 V correspondingly. The MFS structure can be valuable for MFSFET applications.

πŸ“œ SIMILAR VOLUMES

High quality silicon-based PZT thin film
High quality silicon-based PZT thin films for memory applications
✍ Tian-Qi Shao; Tian-Ling Ren; Xiao-Ning Wang; Jun Zhu; Li-Tian Liu; Zhi-Jian Li πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 145 KB

Silicon-based PZT (lead zirconate titanate) thin films have been prepared by a sol-gel method. A very thin PT (lead titanate) film has been used as the seeding layer. Electrical measurements have shown that the dielectric constant, leakage current density, remanent polarization, and coercive field o