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High quality silicon-based PZT thin films for memory applications

✍ Scribed by Tian-Qi Shao; Tian-Ling Ren; Xiao-Ning Wang; Jun Zhu; Li-Tian Liu; Zhi-Jian Li

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
145 KB
Volume
66
Category
Article
ISSN
0167-9317

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✦ Synopsis

Silicon-based PZT (lead zirconate titanate) thin films have been prepared by a sol-gel method. A very thin PT (lead titanate) film has been used as the seeding layer. Electrical measurements have shown that the dielectric constant, leakage current density, remanent polarization, and coercive field of the PZT (Zr:Ti, 53:47) films are 2 2 about 1200, 0.1 nA / cm , 20 mC / cm , and 30 kV/ cm, respectively. The PZT capacitor has appeared almost fatigue free and with good retention properties.

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