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Fabrication and properties of A1N film on GaN substrate by using remote plasma atomic layer deposition method

โœ Scribed by Kwang-Ho Kim; No-Won Kwak; Soo Hong Lee


Book ID
111857031
Publisher
The Korean Institute of Metals and Materials
Year
2009
Tongue
English
Weight
292 KB
Volume
5
Category
Article
ISSN
1738-8090

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The properties of Ru films deposited by
โœ Park, Taeyong ;Choi, Dongjin ;Choi, Hagyoung ;Jeon, Hyeongtag ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 405 KB

## Abstract By using remote plasma atomic layer deposition (ALD), ruthenium thin films were deposited on SiO~2~ using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)~2~] as a Ru precursor and an ammonia plasma as a reactant. Different plasma treatments were applied, and the best results were obtained