✦ LIBER ✦

Morphology and optical properties of GaAs layers grown on (1 1 1)A GaAs substrates in N2ambient by metalorganic chemical vapor deposition

✍ Scribed by B. L. Zhang; X. H. Tang; G. S. Huang; T. Mei; J. Y. Zhu; H. Li

Book ID: 111591035
Publisher: Springer US
Year: 2004
Tongue: English
Weight: 415 KB
Volume: 15
Category: Article
ISSN: 0957-4522
DOI: 10.1023/b:jmse.0000024227.74645.42

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Preparation and properties of Ga1-xAlxAs

Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

✍ Dupuis, R.; Dapkus, P. 📂 Article 📅 1979 🏛 IEEE 🌐 English ⚖ 957 KB

Transport properties of GaAs[sub 1−x]N[s

Transport properties of GaAs[sub 1−x]N[sub x] thin films grown by metalorganic chemical vapor deposition

✍ Ahrenkiel, R. K.; Johnston, S. W.; Keyes, B. M.; Friedman, D. J.; Vernon, S. M. 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 230 KB

Structural and optical properties of Inx

Structural and optical properties of InxGa1−xAs strained layers grown on GaAs substrates by MOVPE

✍ Habchi, M.M.; Tounsi, N.; Bedoui, M.; Zaied, I.; Rebey, A.; El Jani, B. 📂 Article 📅 2014 🏛 Elsevier Science 🌐 English ⚖ 989 KB

Monolayer heterointerfaces and thin laye

Monolayer heterointerfaces and thin layers (∼10 Å) in AlxGa1−xAs-GaAs superlattices grown by metalorganic chemical vapour deposition

✍ Brown, J.M.; Holonyak, N.; Ludowise, M.J.; Dietze, W.T.; Lewis, C.R. 📂 Article 📅 1984 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 549 KB

Dependence of electrical properties on t

Dependence of electrical properties on the crystallographic orientation of CBr4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition

✍ Chang-Sik Son; Seong-II Kim; Yong Kim; Eun Kyu Kim; Suk-Ki Min; In-Hoon Choi 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 389 KB

## Son et al./Electrical properties of CBr4-doped GaAs epilayers Carbon incorporation into GaAs epilayers has been performed by atmospheric pressure metalorganic chemical vapor deposition using CBr4. The electrical properties of CBr4-doped GaAs epilayers grown on the GaAs substrates with various s

A.c. properties of polycrystalline GaAs

A.c. properties of polycrystalline GaAs and (GaAs)1−x(SiC2:H)x grown by metal-organic chemical vapour deposition

✍ S. Sahli; Y. Segui; F. Maury 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 558 KB