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Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors

✍ Scribed by Xin Cao; Stephen Thoms; Douglas Macintyre; Helen McLelland; Euan Boyd; Khaled Elgaid; Richard Hill; Colin R. Stanley; Iain G. Thayne

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

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