50-nm Asymmetrically Recessed Metamorphic High-Electron Mobility Transistors With Reduced Source–Drain Spacing: Performance Enhancement and Tradeoffs

✍ Scribed by Dong Xu; Xiaoping Yang; Seekell, P.; Mt. Pleasant, L.M.; Mohnkern, L.; Kanin Chu; Stedman, R.G.; Vera, A.; Isaak, R.; Schlesinger, L.L.; Carnevale, R.A.; Duh, K.H.G.; Smith, P.M.; Chao, P.C.

• Book ID: 114620777
• Publisher: IEEE
• Year: 2012
• Tongue: English
• Weight: 594 KB
• Volume: 59
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2011.2172614