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Fabrication and basic characteristics of dry-etched micro inductors

✍ Scribed by Yamaguchi, M.; Matsumoto, M.; Ohzeki, H.; Arai, K.I.

Book ID
114546675
Publisher
IEEE
Year
1990
Tongue
English
Weight
299 KB
Volume
26
Category
Article
ISSN
0018-9464

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## Abstract InGaAsP/InP micro‐waveguides are fabricated by a deep (>3 ΞΌm) Reactive Ion Etching. The devices losses are measured by the Fabry–Perot technique for guide width contained between 10 ΞΌm and 0.5 ΞΌm. The measured losses range from 2 dB/mm to 14 dB/mm. Β© 2004 Wiley Periodicals, Inc. Microwa