Characterization and fabrication of InGaAsP/InP deep-etched micro-waveguides

✍ Scribed by A. Beaurain; S. Dupont; H. W. Li; J. P. Vilcot; C. Legrand; J. Harari; M. Constant; D. Decoster

• Publisher: John Wiley and Sons
• Year: 2003
• Tongue: English
• Weight: 160 KB
• Volume: 40
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.11333

✦ Synopsis

Abstract

InGaAsP/InP micro‐waveguides are fabricated by a deep (>3 μm) Reactive Ion Etching. The devices losses are measured by the Fabry–Perot technique for guide width contained between 10 μm and 0.5 μm. The measured losses range from 2 dB/mm to 14 dB/mm. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 216–218, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11333