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LPE growth and characterization of InP/InGaAsP ridge-waveguide lasers at 1.3 μm-wavelength

✍ Scribed by Dr. V. Gottschalch; Dr. B. Rheinländer; Prof. G. Oelgart; Dr. H.-G. Brühl; W. Bayer; G. Schwarz; Dr. K. Vogel

Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
760 KB
Volume
25
Category
Article
ISSN
0232-1300

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📜 SIMILAR VOLUMES

LPE Growth of GaInAsP/InP Heterostructur
LPE Growth of GaInAsP/InP Heterostructures for 1.3 μm Planar Buried Mesa Lasers
✍ Ing. Dr. Sc. J. Novotný; O. Procházková 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 488 KB

## LPE Growth of GaInAsP/InP Heterostructures for 1.3 pm Planar Buried Mesa Lasers LPE heterostructure growth processes devised to prepare GaInAsP/InP planar buried mesa ridge (PBMR) lasers are described. A combination of supercooling and two-step cooling regimes of LPE was used to grow InGaAsP/In