New dry-etch processes, such as low-power reactive-ion etching (RIE) and electron cyclotron resonance, offer very low levels of residual lattice damage. These levels are below the resolution limits of traditional characterisation methods like Raman, photoluminescence, Schotti~ diode, etc. We show th
โฆ LIBER โฆ
Fabrication and characterisation of dry etched CdTeCdMnTe quantum dots
โ Scribed by A. Ribayrol; Y.S. Tang; H.P. Zhou; D. Coquillat; C.M.Sotomayor Torres; J.P. Lascaray; B. Lunn; D.E. Ashenford; G. Feuillet; J. Cibert
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 266 KB
- Volume
- 159
- Category
- Article
- ISSN
- 0022-0248
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