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Method of dry-etching evaluation using quantum dots

✍ Scribed by M. Rahman; S.K. Murad; M.C. Holland; A.R. Long; C.D.W. Wilkinson; J.G. Williamson

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
311 KB
Volume
35
Category
Article
ISSN
0167-9317

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✦ Synopsis

New dry-etch processes, such as low-power reactive-ion etching (RIE) and electron cyclotron resonance, offer very low levels of residual lattice damage. These levels are below the resolution limits of traditional characterisation methods like Raman, photoluminescence, Schotti~ diode, etc. We show that the single-electron charging of a quantum dot fabricated using dry etching offers a very sensitive method of damage detection. For SiC14/SiF 4 RIE of GaAs we find a defect density of around 1015 cm -3, which is at the level of the background impurity concentration in the as-grown material.

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