SNOM-induced photoluminescence of individual InGaAs quantum dots using etched metal-coated fibre tips
✍ Scribed by Manke, I.; Lorbacher, J.; Spithoven, J. L.; Heinrichsdorff, F.; Dähne-Prietsch, M.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 414 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0142-2421
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✦ Synopsis
Scanning near-Ðeld optical microscopy is used to investigate the photoluminescence of individual In 0.4 Ga 0.6 As quantum dots. The high transmission efficiency of etched Ðbre tips allows investigations of quantum dots at room temperature with sufficient intensity, even after coating the tip with metal for background elimination. The pure background-free signal of single quantum dots results in Lorentzian photoluminescence spectra with Ðnite line widths of 10-20 meV at room temperature to AE1 meV at 4 K. This is in contrast to the expectation of extremely narrow lines in the microelectron-volt region.