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Fabricating TiO2Photocatalysts by rf Reactive Magnetron Sputtering at Varied Oxygen Partial Pressures

โœ Scribed by W. S. Lin; L. M. Kao; W. P. Li; C. Y. Hsu; K. H. Hou

Book ID
107461710
Publisher
Springer US
Year
2010
Tongue
English
Weight
545 KB
Volume
20
Category
Article
ISSN
1059-9495

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โœ A.B. Panda; P. Laha; K. Harish; B. Sarkar; S.V. Chaure; W.A. Sayyad; V.S. Jadhav ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 553 KB

TiO 2 thin films have been deposited at different Ar:O 2 gas ratios (20:80,70:30,50:50,and 40:60 in sccm) by rf reactive magnetron sputtering at a constant power of 200 W. The formation of TiO 2 was confirmed by X-ray photoelectron spectroscopy (XPS). The oxygen percentage in the films was found to