Physical properties of copper oxide thin films prepared by dc reactive magnetron sputtering under different oxygen partial pressures
β Scribed by Chun-Lung Chu; Hsin-Chun Lu; Chen-Yang Lo; Chi-You Lai; Yu-Hsiang Wang
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 294 KB
- Volume
- 404
- Category
- Article
- ISSN
- 0921-4526
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The nanocrystal thin films of zinc oxide doped by Al (ZnO:Al) were deposited by dc reactive magnetron sputtering on the glass substrates, in the pressure range of 33-51 Pa. From the X-ray diffraction patterns, the nanocrystalline structure of ZnO:Al films and the grain size were determined. The opti
Cu/ZnO/n + -Si structures were prepared by magnetron sputtering of a layer of ZnO thin film onto heavily doped silicon substrate, followed by thermal evaporation of a thin layer of metallic Cu. The resistive switching characteristics of Cu/ZnO/n + -Si structures were investigated as a function of ox